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/Si(001) by N
beam irradiationHachiue, Shunsuke; Teraoka, Yuden
Shinku, 48(5), p.343 - 345, 2005/05
Silicon oxynitride layers were formed by irradiation of nitrogen ion beams at silicon substrates with ultrathin oxide layers. The nitrogen beam was mass-selected N ion beam. The translational kinetic energy was about 3 keV. The dose was 6.3
10
ions/cm
. This value is almost equal to the atom density at the Si(001) surface. Chemical bonding states of irradiated nitrogen atoms were analyzed by photoemission spectroscopy with synchrotron radiation. Although the nitrogen dose was a low density, N-1s photoemission spectra could be deconvoluted into four peaks. The chemical bonding state of each peak was assigned with a reference of a oxide layer thickness dependence of the N-1s photoemission peak profile.
Kojima, Takuji
Shokubai, 46(3), p.248 - 253, 2004/04
The present paper describes research and development on purification technology using electron beams for flue/odd gases containing pollutants: removal of sulfate oxide and nitrogen oxide from flue gases of coal/oil combustion power plants, decomposition of dioxins in waste incineration flue gas, and decomposition/removal of toxic volatile organic compounds from off gas.
and NOx by powdery materials in radiation treatment of exhaust gases; ;
Int.J.Appl.Radiat.Isot., 36(10), p.807 - 812, 1985/00
Times Cited Count：14 Percentile：83.03(Nuclear Science & Technology)no abstracts in English
; ;
Kogai To Taisaku, 21(7), p.629 - 634, 1985/00
no abstracts in English
and SO removals from flue gas;
Radiation Physics and Chemistry, 24(1), p.145 - 165, 1984/00
no abstracts in English
Machi, Sueo; ; ; ; Kawakami, Waichiro; ; *; *; *
Radiation Physics and Chemistry, 9(1-3), p.371 - 388, 1977/03
no abstracts in English
